डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NTE290 | Silicon Complementary Transistors NTE289 (NPN) & NTE290 (PNP) Silicon Complementary Transistors
Audio Power Amplifier, Switch
Applications: D 1W Audio Power Amplifier Applications D Switching Applications
Absolute Maximum Ratings: (TA = +25° |
NTE |
|
NTE2900 | N-Channel MOSFET NTE2900 MOSFET N−Ch, Enhancement Mode High Speed Switch TO220 Type Package
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements
D
|
NTE |
|
NTE2902 | N-Channel MOSFET NTE2902
N-Channel Silicon Junction Field Effect Transistor
Description:
The NTE2902 is a field effect transistor in a TO92 type package designed for use in VHF/UHF amplifier applications.
Absolute Maximum Rat |
NTE |
|
NTE2903 | N-Channel MOSFET NTE2903 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Full Pack Type Package
D
Features: D Low Drain−Source ON Resistance: RDS(ON) = 1.35 Typ D High Forward Transfer Admittance: |yfs| = 3.5S |
NTE |
|
NTE2904 | N-Channel MOSFET NTE2904 MOSFET N−Ch, Enhancement Mode High Speed Switch TO−220 Type Package
Features: D Advanced Process Technology D Ultra Low On−Resistance D Dynamic dv/dt Rating D +1755C Operating Temperature D Fast S |
NTE |
|
NTE2905 | P-Channel MOSFET NTE2905 MOSFET P−Ch, Enhancement Mode High Speed Switch
Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D P−Channel D Isolated Central Mounting Hole D Fast Switching D Ease of Paralleling D Si |
NTE |
|
NTE2906 | N-Channel MOSFET NTE2906 MOSFET N−Channel, Enhancement Mode High Speed Switch (Compl to NTE2998) TO3 Type Package
Features: D High Speed Switching D High Voltage D High Energy Rating D Enhancement Mode D Integral Protection |
NTE |
www.DataSheet.in | 2017 | संपर्क |