डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
NGD8209N | Ignition IGBT NGD8209N Ignition IGBT 12 A, 410 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in induc |
ON Semiconductor |
|
NGD8209NT4G | Ignition IGBT NGD8209N Ignition IGBT 12 A, 410 V
N−Channel DPAK
This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over−Voltage clamped protection for use in induc |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |