| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
|
|
|
NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET ● VDS =60V,ID =7A RDS(ON) < 30mΩ @ VGS=10V （Typ：24mΩ） RDS(ON) < 35mΩ @ VGS=4.5V （Typ：27mΩ） ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Low gate to drain charge to reduce switching losses Schem |
|