| No. | Partie # | Fabricant | Description | Fiche Technique |
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NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET ● VDS =40V,ID =12A RDS(ON) <12mΩ @ VGS=10V (Typ. 8.4 mΩ) RDS(ON) <18mΩ @ VGS=4.5V (Typ. 12.3 mΩ) ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Excell |
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