| No. | Partie # | Fabricant | Description | Fiche Technique |
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NCEPOWER |
N-Channel Enhancement Mode Power MOSFET ● VDS =30V,ID =50A RDS(ON) < 9mΩ @ VGS=10V RDS(ON) < 15mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat diss |
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NCE Power Semiconductor |
N-Channel Enhancement Mode Power MOSFET ● VDS =30V,ID =50A RDS(ON) < 11mΩ @ VGS=10V RDS(ON) < 16mΩ @ VGS=5V ● High density cell design for ultra low Rdson ● Fully characterized Avalanche voltage and current ● Good stability and uniformity with high EAS ● Excellent package for good heat dis |
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