| No. | Partie # | Fabricant | Description | Fiche Technique |
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NCE Power Semiconductor |
P-Channel Enhancement Mode Power MOSFET ● VDS =-19V,ID =-45A RDS(ON) < 7mΩ @ VGS=-4.5V RDS(ON) < 9mΩ @ VGS=-2.5V RDS(ON) < 12mΩ @ VGS=-1.8V ● High density cell design for ultra low Rdson ● Fully characterized avalanche voltage and current ● Good stability and uniformity with high EAS ● Exc |
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