डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MTY16N80E | TMOS POWER FET 16 AMPERES 800 VOLTS RDS(on) = 0.50 OHM MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY16N80E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTY16N80E
Motorola Preferred Device
N–Channel Enhancement� |
Motorola |
|
MTY16N80E | Power Field Effect Transistor MTY16N80E
Designer’s™ Data Sheet TMOS E−FET.™ Power Field Effect Transistor
N−Channel Enhancement−Mode Silicon Gate
This high voltage MOSFET uses an advanced termination scheme to provide enhanced v |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |