MTY14N100E डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| MTY14N100E | TMOS POWER FET 14 AMPERES 1000 VOLTS RDS(on) = 0.80 OHM MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTY14N100E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor
Designer's
MTY14N100E
Motorola Preferred Device
N–Channel Enhancement |
 Motorola |
|
| MTY14N100E | Power Field Effect Transistor MTY14N100E
TMOS E−FET.™ Power Field Effect Transistor
N−Channel Enhancement−Mode Silicon Gate
This advanced TMOS power FET is designed to withstand high energy in the avalanche and commutation modes. Th |
 ON Semiconductor |
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www.DataSheet.in | 2017 | संपर्क |