MTW8N60E डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| MTW8N60E | TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW8N60E/D
™ Data Sheet TMOS E-FET.™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole
Designer's
MTW8N60E
Motorola Preferred |
 Motorola |
|
| MTW8N60E | TMOS POWER FET 8.0 AMPERES 600 VOLTS RDS(on) = 0.55 OHM MTW8N60E
Preferred Device
Power MOSFET 8 Amps, 600 Volts
N−Channel TO−247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading pe |
 ON Semiconductor |
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