डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MTW6N100E | TMOS POWER FET MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
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Designer's
TMOS E-FET .™ Power Field Effect Transistor TO-247 With Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Ga |
Motorola |
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MTW6N100E | Power MOSFET MTW6N100E
Preferred Device
Power MOSFET 6 Amps, 1000 Volts
N−Channel TO−247
This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading p |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |