डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MTW32N20E | TMOS POWER FET MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTW32N20E/D
Designer's
TMOS E-FET .™ Power Field Effect Transistor TO-247 with Isolated Mounting Hole N–Channel Enhancement–Mode Silicon Ga |
Motorola |
|
MTW32N20E | Power MOSFET MTW32N20E
Power MOSFET 32 Amps, 200 Volts
N−Channel TO−247
This advanced Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The new energy efficient design also offer |
ON Semiconductor |
|
MTW32N20E | N-Channel MOSFET isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
MTW32N20E
·FEATURES ·With TO-247 packaging ·With low gate drive requirements ·Low switching loss ·Low on-state resistance ·Easy to drive ·100% ava |
INCHANGE |
www.DataSheet.in | 2017 | संपर्क |