डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MTP52N06V | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.022 OHM MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP52N06V/D
TMOS Power Field Effect Transistor
TMOS V is a new technology designed to achieve an on–resistance area product about one |
Motorola |
|
MTP52N06V | Power MOSFET MTP52N06V
Preferred Device
Power MOSFET 52 Amps, 60 Volts
N−Channel TO−220
This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed |
ON Semiconductor |
|
MTP52N06VL | TMOS POWER FET 52 AMPERES 60 VOLTS RDS(on) = 0.025 OHM MOTOROLA
Designer's
SEMICONDUCTOR TECHNICAL DATA
Order this document by MTP52N06VL/D
TMOS Power Field Effect Transistor
TMOS V is a new technology designed to achieve an on–resistance area product about on |
Motorola |
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