MTD3055V डाटा शीट PDF( Datasheet )

MTD3055V March 2015 MTD3055V* N-Channel Enhancement Mode Field Effect Transistor General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters

MTD3055V Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed swi

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD3055V/D TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistanc

MTD3055VL Preferred Device Power MOSFET 12 Amps, 60 Volts N–Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed sw

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD3055VL/D TMOS V Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistan

www.DataSheet4U.com MTD3055VL August 1999 DISTRIBUTION GROUP* MTD3055VL General Description N-Channel Logic Level Enhancement Mode Field Effect Transistor Features • 12 A, 60 V. RDS(ON) = 0.18 Ω @ VGS =