MTD2955V डाटा शीट PDF( Datasheet )

MTD2955V Power MOSFET 12 A, 60 V P−Channel DPAK This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low voltage, high speed switching applications in p

MTD2955V August 1999 DISTRIBUTION GROUP* MTD2955V P-Channel Enhancement Mode Field Effect Transistor General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency

MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2955V/D TMOS Power Field Effect Transistor DPAK for Surface Mount TMOS V is a new technology designed to achieve an on–resistance