डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MT3S111 | Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S111
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
Features
• Low-Noise Figure: NF=0.9 dB (typ.) (@ f=1 GHz) • High Gain:|S21e|2= |
Toshiba Semiconductor |
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MT3S111P | Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S111P
MT3S111P
VHF-UHF Low-Noise, Low-Distortion Amplifier Applications
Features
• Low-Noise Figure: NF=0.95 dB (typ.) (@f=1 GHz) • High G |
Toshiba Semiconductor |
|
MT3S111TU | Silicon-Germanium NPN Epitaxial Planar Type Transistor TOSHIBA Transistor Silicon-Germanium NPN Epitaxial Planar Type
MT3S111TU
MT3S111TU
VHF-UHF Low-Noise, Low-Distortion Amplifier Application
Features
• Low-Noise Figure: NF=0.85 dB (typ.) (@ f=1 GHz) • High |
Toshiba Semiconductor |
www.DataSheet.in | 2017 | संपर्क |