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MRFG35003N6T1 | RF Power Field Effect Transistor Freescale Semiconductor Technical Data
Document Number: MRFG35003N6 Rev. 5, 1/2006
Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for 3.5 GHz WLL/MMDS/BWA or UMTS applications. Characterized |
Freescale Semiconductor |
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MRFG35003N6T1 | RF Power Field Effect Transistor | Freescale Semiconductor |
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