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MRFG35002N6AT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor Freescale Semiconductor Technical Data
Document Number: MRFG35002N6A Rev. 1, 12/2008
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Gallium Arsenide PHEMT
RF Power Field Effect Transistor
Designed for WLL/MMDS/BWA or UMTS driver applic |
Freescale Semiconductor |
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MRFG35002N6AT1 | Gallium Arsenide PHEMT RF Power Field Effect Transistor | Freescale Semiconductor |
www.DataSheet.in | 2017 | संपर्क |