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MRF6V2010NB | RF Power FET NXP Semiconductors Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed primarily for CW large--signal output and driver applications with frequencies up to 450 |
NXP |
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MRF6V2010NBR1 | RF Power Field Effect Transistor Freescale Semiconductor Technical Data
Document Number: MRF6V2010N Rev. 1, 5/2007
RF Power Field Effect Transistor
N - Channel Enhancement - Mode Lateral MOSFETs
Designed primarily for CW large - signal outp |
Freescale Semiconductor |
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