डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MRF6S21140HSR3 | RF Power FET Freescale Semiconductor Technical Data
RF Power Field Effect Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
Designed for W--CDMA base station applications with frequencies from 2110 to 2170 MHz. Suita |
NXP |
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MRF6S21140HSR3 | RF Power FET | NXP |
www.DataSheet.in | 2017 | संपर्क |