MRF5812 डाटा शीट PDF( Datasheet )

MRF5812 NPN SILICON RF MICROWAVE TRANSISTOR DESCRIPTION: The ASI MRF5812 is Designed for high current, low power, low noise, amplifiers up to 1.0 GHz. PACKAGE STYLE SO-8 FEATURES: • Low Noise – 2.5 dB @

MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Ef

MRF5812, R1, R2 MRF5812G, R1, R2 * G Denotes RoHS Compliant, Pb free Terminal Finish Features • • • • Low Noise - 2.5 dB @ 500 MHZ Associated Gain = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA Cost Ef