डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MRF137 | N-CHANNEL MOS BROADBAND RF POWER FET SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF137/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
. . . designed for wideband large–signal output and driver st |
Tyco Electronics |
|
MRF137 | N-CHANNEL MOS BROADBAND RF POWER FET MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MRF137/D
The RF MOSFET Line
RF Power Field-Effect Transistor
N–Channel Enhancement–Mode
. . . designed for wideband large–signal output and |
Motorola |
|
MRF137 | The RF MOSFET MRF137
The RF MOSFET Line 30W, to 400MHz, 28V
Designed for wideband large signal output and drive stages up to 400 MHz range.
N–Channel enhancement mode
• Guaranteed 28 V, 150 MHz performance
Output power |
MA-COM |
|
MRF13750H | RF Power LDMOS Transistors NXP Semiconductors Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in t |
NXP |
|
MRF13750HS | RF Power LDMOS Transistors NXP Semiconductors Technical Data
RF Power LDMOS Transistors
N--Channel Enhancement--Mode Lateral MOSFETs
These 750 W CW transistors are designed for industrial, scientific and medical (ISM) applications in t |
NXP |
www.DataSheet.in | 2017 | संपर्क |