डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MPSW56 | PNP Transistor RoHS MPSW56
MPSW56 TRANSISTOR (PNP)
DFEATURES Power dissipation
TPCM:
1 W (Tamb=25℃)
.,LCollector current
ICM: -500 Collector-base voltage
mA
OV(BR)CBO: -80 V
Operating and storage junction temperatur |
WEJ |
|
MPSW56 | One Watt Amplifier Transistors MPSW55, MPSW56
One Watt Amplifier Transistors
PNP Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage
MPSW55 VCEO
−60
Vdc
MPS |
ON Semiconductor |
|
MPSW56 | One Watt Amplifier Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MPSW55/D
One Watt Amplifier Transistors
PNP Silicon
COLLECTOR 3 2 BASE 1 EMITTER
MPSW55 MPSW56*
*Motorola Preferred Device
MAXIMUM RATINGS
Ratin |
Motorola |
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MPSW56 | PNP General Purpose Amplifier MPSW56
MPSW56
C
TO-226
B E
PNP General Purpose Amplifier
This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 800 mA. Sourced from Process 79.
Ab |
Fairchild |
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