MMDL770 डाटा शीट PDF( Datasheet )

Production specification Schottky Barrier Diode FEATURES  Low reverse leakage—IR=200nA(Max.).  Very Low Capacitance—1.0pF @20V.  Extremely Low minority carrier lifetime.  High reverse leakage

® WON-TOP ELECTRONICS MMDL770 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Very Low Capacitance  Low Reverse Leakage  PN Junction Guard Ring for Transient and ESD Protection  For General Pur

Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applications. • Ext

MMDL770T1 Schottky Barrier Diode Schottky barrier diodes are designed primarily for high–efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital application

MMDL770T1G Schottky Barrier Diode Schottky barrier diodes are designed primarily for high−efficiency UHF and VHF detector applications. Readily available to many other fast switching RF and digital applicatio