MMBTA63 डाटा शीट PDF( Datasheet )

MMBTA63 / MMBTA64 PNP Silicon Epitaxial Planar Transistor for general purpose application, darlington transistor TO-236 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector Base Voltage C

Production specification PNP Darlington Amplifier Transistor FEATURES  Epitaxial planar die construction.  Complementary NPN type available (MMBTA13/MMBTA14).  High current gain. Pb Lead-free MMBTA

UNISONIC TECHNOLOGIES CO., LTD MMBTA63-64 PNP SILICON TRANSISTOR DARLINGTON TRANSISTOR  DESCRIPTION The UTC MMBTA63-64 is a Darlington transistor.  FEATURES * Collector-Emitter Voltage: VCES = -30V *

Features  Epitaxial Planar Die Construction  Ideal for Low Power Amplification and Switching  High Current Gain  Complementary NPN Type: MMBTA13 /MMBTA14  Totally Lead-Free & Fully RoHS Compliant

MPSA63 / MMBTA63 / PZTA63 Discrete POWER & Signal Technologies MPSA63 MMBTA63 C PZTA63 C E C B E C B TO-92 E SOT-23 Mark: 2U B SOT-223 PNP Darlington Transistor This device is designed for applicatio

MCC TM Micro Commercial Components
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# MMBTA63 MMBTA64 Features • This device is designed for

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol V CES vCBO v EBO c THERMAL CHARACTERISTICS Characteristic Symbol •Total