MMBT9015 डाटा शीट PDF( Datasheet )

UNISONIC TECHNOLOGIES CO., LTD MMBT9015 PNP SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  FEATURES *High total power dissipation. (450mW) *Excellent hFE linearity. *Complementary to UTC MMBT90

MMBT9015 PNP Silicon Epitaxial Planar Transistors for switching and AF amplifier applications As complementary types the NPN transistor MMBT9014 is recommended. Absolute Maximum Ratings (Ta = 25 OC) Parameter

1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES *High total Power Dissipation. (450mW) *Excellent hFE linearity. *Complementary to MMBT9014 * ESD Rating − Human Body Model: >4

Features  For Switching and Amplifier Applications.  As Complementary Type of the PNP Transistor MMBT9014 is Recommended. MMBT9015 PNP Transistor SOT-23 (TO-236) 1.Base 2.Emitter 3.Collector Absolute M