MMBT9013 डाटा शीट PDF( Datasheet )

UNISONIC TECHNOLOGIES CO., LTD MMBT9013 NPN SILICON TRANSISTOR 1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION 3  FEATURES *High total Power Dissipation. (625mW) *High Collector Cur

SMD General Purpose Transistor (NPN) Features  NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications Mechanical Data Case: Terminals: Weight: SOT-23, Plastic Package Solderable

1W OUTPUT AMPLIFIER OF POTABLE RADIOS IN CLASS B PUSH-PULL OPERATION „ FEATURES *High total Power Dissipation. (625mW) *High Collector Current. (500mA) *Excellent hFE linearity. *Complementary to MMBT9012 * ES

MMBT9013 NPN Silicon Epitaxial Planar Transistors For switching and amplifier applications As complementary types the PNP transistors MMBT9012 is recommended. Absolute Maximum Ratings (Ta = 25℃) PARAMETER C

MMBT9013【NPN Transistors / 200mW / SOT-23】 NPN Silicon Epitaxial Planar Transistors Features ◆ Switching and Amplifier applications PACKAGE OUTLINE Absolute Maximum Ratings【TA=25℃】 Parameter Symb

Features  For Switching and Amplifier Applications.  As Complementary Type of the PNP Transistor MMBT9012 is Recommended. MMBT9013 NPN Transistor SOT-23 (TO-236) Absolute Maximum Ratings Ratings at 25�

MMBT9013【NPN Transistors / 200mW / SOT-23】 NPN Silicon Epitaxial Planar Transistors Features ◆ Switching and Amplifier applications PACKAGE OUTLINE Absolute Maximum Ratings【TA=25℃】 Parameter Symb