MMBT6427 डाटा शीट PDF( Datasheet )

MMBT6427 NPN SURFACE MOUNT DARLINGTON TRANSISTOR Features • Epitaxial Planar Die Construction • Ideal for Low Power Amplification and Switching • High Current Gain • Lead, Halogen and Antimony Free, R

2N6427 / MMBT6427 Discrete POWER & Signal Technologies 2N6427 MMBT6427 C E C B TO-92 E SOT-23 Mark: 1V B NPN Darlington Transistor This device is designed for applications requiring extremely high curre

NPN Transistors Darlington Amplifier * We declare that the material of product compliance with RoHS requirements. P b Lead(Pb)-Free MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collecto

MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO vCBO VEBO 'C THERMAL CHARACTERISTICS Characteristic Symbol •Total

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT6427LT1/D Darlington Transistor NPN Silicon COLLECTOR 3 BASE 1 MMBT6427LT1 Motorola Preferred Device EMITTER 2 3 1 2 MAXIMUM RATINGS Ratin