डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MMBT5551LT1 | High Voltage Transistors High Voltage Transistors
NPN Silicon
3 COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Con |
ETL |
|
MMBT5551LT1 | High Voltage Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT5550LT1/D
High Voltage Transistors
NPN Silicon
1 BASE
COLLECTOR 3
MMBT5550LT1 MMBT5551LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Ratin |
Motorola |
|
MMBT5551LT1 | High Voltage Transistors(NPN Silicon) MMBT5550LT1, MMBT5551LT1
MMBT5551LT1 is a Preferred Device
High Voltage Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 Symbol VCEO VCBO VEBO IC 5550 140 160 6.0 600 5551 160 180 Unit Vdc Vdc Vd |
ON |
|
MMBT5551LT1 | TRANSISTOR RoHS
MMBT5551LT1
NPN EPITAXIAL SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR Collector Dissipation:Pc-225mW(Ta=25o)
.,LTDCollector-Emiller Voltage:VCEO=160V
SOT-23
1
1. 2.4 1.3
3
2 1.BASE 2.EMITTER 3.COLLECTOR |
WEJ |
|
MMBT5551LT1 | NPN Transistor TIGER ELECTRONIC CO.,LTD
MMBT5551LT1
NPN EPITAXIAL PLANAR TRANSISTOR
Description
The MMBT5551LT1 is designed for general purpose applications requiring high Breakdown Voltages.
Absolute Maximum Ratings
• M |
TGS |
www.DataSheet.in | 2017 | संपर्क |