डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MMBT5550L | NPN Transistors High Voltage Transistors
NPN Silicon
MMBT5550L, MMBT5551L
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101 Qualified and PP |
ON Semiconductor |
|
MMBT5550LT1 | High Voltage Transistors High Voltage Transistors
NPN Silicon
3 COLLECTOR
MAXIMUM RATINGS
Rating
Symbol
Collector–Emitter Voltage
V CEO
Collector–Base Voltage
V CBO
Emitter–Base Voltage
V EBO
Collector Current — Con |
ETL |
|
MMBT5550LT1 | High Voltage Transistors MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MMBT5550LT1/D
High Voltage Transistors
NPN Silicon
1 BASE
COLLECTOR 3
MMBT5550LT1 MMBT5551LT1*
*Motorola Preferred Device
MAXIMUM RATINGS
Ratin |
Motorola |
|
MMBT5550LT1 | High Voltage Transistors(NPN Silicon) MMBT5550LT1, MMBT5551LT1
MMBT5551LT1 is a Preferred Device
High Voltage Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 Symbol VCEO VCBO VEBO IC 5550 140 160 6.0 600 5551 160 180 Unit Vdc Vdc Vd |
ON |
|
MMBT5550LT1G | High Voltage Transistors MMBT5550L, MMBT5551L, SMMBT5551L High Voltage Transistors
NPN Silicon
Features http://onsemi.com
COLLECTOR 3 1 BASE 2 EMITTER
• AEC−Q101 Qualified and PPAP Capable • S Prefix for Automotive and Other App |
ON Semiconductor |
www.DataSheet.in | 2017 | संपर्क |