MMBT5550 डाटा शीट PDF( Datasheet )

ભၼሽ՗‫ૻڶ‬ֆ‫׹‬ Mayloon Electronic Co., Ltd., www.mayloon.com.hk SINLOON® ᠨᄕীདྷ᧯ጥ MMBT5550 SOT-23 NPN General Purpose Amplifier ϭ FEATURE: Ϭ Power Dissipation Ϭ This device i

NPN General Purpose Amplifier FEATURES  Epitaxial planar die construction.  Ultra-small surface mount package. Pb Lead-free Production specification MMBT5550 APPLICATIONS  High voltage transistors.

SMD High Voltage Transistor (NPN) MMBT5550/MMBT5551 SMD High Voltage Transistor (NPN) Features • NPN Silicon Epitaxial Planar Transistor for Switching and Amplifier Applications • RoHS compliance Mechanic

MMBT5550 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) HIGH VOLTAGE TRANSISTOR NPN SILICON Refer to 2N5550 for graphs. MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltag

MMBT5550 SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Power dissipation PCM: 0.225 W(Tamb=25OC) * Collector current ICM: 0.6 A * Collector-base voltage V(BR)CBO: 160 V * Operating and storage junctio

SMD Type Transistors Features NPN Silicon High Voltage Transistors MMBT5550 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 +0.12.4 -0.1 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Collec

MMBT5550 / MMBT5551 MMBT5550 / MMBT5551 NPN Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-05-09 2.9 ±0.1 0.4 3 Type