MMBF170 डाटा शीट PDF( Datasheet )

Field Effect Transistor N-Channel, Enhancement Mode BS170, MMBF170 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, D

MMBF170 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary BVDSS 60V RDS(on) Max 5.0Ω @ VGS = 10V 5.3Ω @ VGS = 4.5V ID Max TA = +25°C 200mA 190mA Features and Benefits • Low On-Resistance • Low Gat

BS170 / MMBF170 — N-Channel Enhancement Mode Field Effect Transistor March 2010 BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field

MMBF170L, NVBF170L Power MOSFET 500 mA, 60 V, N−Channel SOT−23 Features • NVBF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified an

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBF170LT1/D TMOS FET Transistor N–Channel ® 1 GATE DRAIN 3 MMBF170LT1 2 SOURCE 3 1 2 MAXIMUM RATINGS Rating Drain–Source Voltage Drain

MMBF170LT1 Power MOSFET 500 mA, 60 V N−Channel SOT−23 Features • Pb−Free Packages are Available MAXIMUM RATINGS Rating Drain−Source Voltage Drain−Gate Voltage Gate−Source Voltage − Continuous

Features • Low On-Resistance • Low Gate Threshold Voltage • Low Input Capacitance • Fast Switching Speed • Low Input/Output Leakage • Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) • Halog