डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MMBD452 | SURFACE MOUNT SCHOTTKY DIODE .007(.20)MIN .103(2.60) .086(2.20)
UPM
MMBD452
SURFACE MOUNT SCHOTTKY DIODE
Voltage Range 30 Volts Power 200mWatts
Features
* Low Capacitance: 1.5 pF (Max) at VR=15V * Very Low VF: 0.36V (Typ) at IF = 1mA * |
UPM |
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MMBD452 | Dual Hot-Carrier Diodes Production specification
Dual Hot-Carrier Diodes
FEATURES
z Very low capacitance.
Pb
z Extremely low minority carrier lifetime. Lead-free
z Low reverse leakage.
z Power dissipation Pd=225mW.
MMBD452
AP |
GME |
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MMBD452 | SURFACE MOUNT SCHOTTKY DIODE MMBD301/MMBD452
SURFACE MOUNT SCHOTTKY DIODE
VOLTAGE 30 Volts
POWER
200mWatts
FEATURES
• Low Capacitance : 1.5pF(Max)at VR=15V • Very Low VF : 0.36V (Typ) at IF = 1mA • Extremely Fast Switching Speed |
Pan Jit International |
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MMBD452LT1 | DUAL HOT-CARRIER DETECTOR AND SWITCHING DIODES www.DataSheet4U.com
MMBD452LT1
Preferred Device
Dual Hot−Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high−efficiency UHF and VHF detector applications. They are readily |
ON |
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MMBD452LT1 | Dual Hot-Carrier Diodes MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Dual Hot-Carrier Diodes
Schottky Barrier Diodes
These devices are designed primarily for high–efficiency UHF and VHF detector applications. They are readily adaptable to |
Motorola |
www.DataSheet.in | 2017 | संपर्क |