MMBD352W डाटा शीट PDF( Datasheet )

MMBD101W/MMBD352W/MMBD354W/MMBD355W SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 200 mW FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V

® WON-TOP ELECTRONICS MMBD352W SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Very Low Capacitance  Low Forward Voltage  PN Junction Guard Ring for Transient and ESD Protection  For General Pu

Production specification Schottky Barrier Diode FEATURES  Very low capacitance-less than 1.0Pf @zero volts. Pb Lead-free  Low forward voltage-0.5 Voltage(Typ.) @IF=10mA. MMBD352W APPLICATIONS  F

www.DataSheet4U.com MMBD352WT1 Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Feature

MOTOROLA www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352WT1/D Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable als

MMBD352WT1G, NSVMMBD352WT1G Dual Schottky Barrier Diode These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. Features