MMBD352 डाटा शीट PDF( Datasheet )

MMBD101/MMBD352/MMBD354/MMBD355 SURFACE MOUNT HIGH FREQUENCY SCHOTTKY DIODE VOLTAGE 7.0 Volts POWER 250 mW FEATURES • Low Capacitance,Minimizing Insertion Losses in VHF Applications • Low VF : 0.5V (Ty

® WON-TOP ELECTRONICS MMBD352 / 353 / 354 / 355 SURFACE MOUNT SCHOTTKY BARRIER DIODE Pb Features  Very Low Capacitance L  Low Forward Voltage  PN Junction Guard Ring for Transient and A ESD Pro

MMBD352-355 Dual Hot Carrier Mixer Diodes SOT-23 Features — Very low capacitance— Less than 1.0pF@zero V. — Low forward voltage—IF=10mA. — Power dissipation Pd=300mW — Pb/RoHS Free Applications — Desi

Dual Hot Carrier Mixer Diodes FEATURES z Very low capacitance— Less than 1.0pF@zero V. Pb Lead-free z Low forward voltage—IF=10mA. z Power dissipation Pd=300mW z Pb-Free package is available. APPLICAT

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBD352LT1/D Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detect

MAXIMUM RATINGS Rating Continuous Reverse Voltage Symbol vR THERMAL CHARACTERISTICS Characteristic Symbol •Total Device Dissipation, Ta = 25°C Derate above 25°C PD Storage Temperature Tstg "Thermal

www.DataSheet4U.com MMBD352LT1, MMBD353LT1, MMBD354LT1, MMBD355LT1 Dual Hot Carrier Mixer Diodes These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ul