MJL21194 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL21193/D Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power

MJL21193 (PNP), MJL21194 (NPN) Silicon Power Transistors The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJL21194 www.datasheet4u.com DESCRIPTION ·With TO-3PL package ·Complement to type MJL21193 ·Excellent gain linearity APPLICATIO

isc Silicon NPN Power Transistor MJL21194 DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain – hFE = 25 Min @ IC = 8 Adc ·Complement to Type MJL21193 ·Minim

isc Silicon NPN Power Transistor INCHANGE Semiconductor MJL21194G DESCRIPTION ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 250V(Min) High DC Current Gain – hFE = 25 Min @ IC = 8 Adc ·Complement