MJH11017 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| MJH11017 | Silicon PNP Darlington Power Transistor isc Silicon PNP Darlington Power Transistor
MJH11017
DESCRIPTION ·High DC Current Gain-
: hFE = 400(Min)@ IC= -10A ·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = -150V(Min) ·Low Collector-Emitter Sat |
 Inchange Semiconductor |
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| MJH11017 | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJH11017/D
MJH10012 (See MJ10012)
Complementary Darlington Silicon Power Transistors
. . . designed for use as general purpose amplifiers, low fr |
 Motorola |
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| MJH11017 | Complementary Darlington Silicon Power Transistors MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN)
Complementary Darlington Silicon Power Transistors
These devices are designed for use as general purpose amplifiers, low frequency swit |
 ON |
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