डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJH11012 | NPN Transistor isc Silicon NPN Darlington Power Transistor
MJH11012
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: V(BR)CEO= 60V(Min.) ·High DC Current Gain-
: hFE= 1000(Min.)@IC= 20A ·Low Collector Saturation Voltag |
INCHANGE |
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MJH11017 | Silicon PNP Darlington Power Transistor | Inchange Semiconductor |
|
MJH11019 | Complementary Darlington Silicon Power Transistors | ON |
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MJH11019 | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
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MJH11018 | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
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MJH11017 | 15 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS | Motorola |
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MJH11012 | NPN Transistor | INCHANGE |
|
MJH11018 | Silicon NPN Power Transistor | Inchange Semiconductor |
|
MJH11017 | Complementary Darlington Silicon Power Transistors | ON |
|
MJH11018 | Complementary Darlington Silicon Power Transistors | ON |
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