MJF18008 डाटा शीट PDF( Datasheet )

isc Silicon NPN Power Transistor DESCRIPTION ·Collector-Base Breakdown Voltage- : V(BR)CBO= 1000V(Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device performance and reliable operati

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18008/D ™ Data Sheet SWITCHMODE™ Designer's MJE18008 * MJF18008 * *Motorola Preferred Device NPN Bipolar Power Transistor For Switching P

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors MJF18008 www.datasheet4u.com DESCRIPTION ·With TO-220F package ·High voltage ,high speed APPLICATIONS ·Designed for use in 220V

MJE18008, MJF18008 Switch-mode NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state−of−the−art die designed for use in 220 V line−o