डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJE802T | NPN Transistor isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Breakdown Voltage—
: V(BR)CEO = 80 V ·DC Current Gain—
: hFE = 750(Min) @ IC= 1.5A = 100(Min) @ IC= 4A
·Complement to Type MJ |
INCHANGE |
|
MJE802T | POWER TRANSISTOR MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN
COMPLEMENTARY POWER DARLINGTON TRANSISTORS
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700T, MJE800T series devices are medi |
Central Semiconductor |
www.DataSheet.in | 2017 | संपर्क |