MJE800T डाटा शीट PDF( Datasheet )

isc Silicon NPN Darlington Power Transistor DESCRIPTION ·Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60 V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5A = 100(Min) @ IC= 4A ·Complement to Type MJ

MJE700T THRU MJE703T PNP MJE800T THRU MJE803T NPN COMPLEMENTARY POWER DARLINGTON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE700T, MJE800T series devices are medi

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D PNP Plastic Darlington Complementary Silicon Power Transistors . . . designed for general–purpose amplifier and low–speed switching