डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJE5742H | NPN Transistor isc Silicon NPN Darlington Power Transistor
MJE5742H
DESCRIPTION ·Collector-Emitter Breakdown Voltage
: VCEO= 400V(Min) · Low Collector-Emitter Saturation Voltage ·Minimum Lot-to-Lot variations for robust |
INCHANGE |
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MJE5742 | POWER DARLINGTON TRANSISTORS | Motorola |
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MJE5742 | POWER DARLINGTON TRANSISTORS | ON |
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MJE5742H | NPN Transistor | INCHANGE |
www.DataSheet.in | 2017 | संपर्क |