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भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJE3055T | Complementary Silicon Plastic Power Transistors MJE2955T (PNP), MJE3055T (NPN)
Complementary Silicon Plastic Power Transistors
These devices are designed for use in general−purpose amplifier and switching applications.
Features
• High Current Gain − B |
ON Semiconductor |
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MJE3055T | Silicon NPN transistor MJE3055T
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-220 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-220 Plastic Package.
特征 / Features
直流电流大,特征频率� |
BLUE ROCKET ELECTRONICS |
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MJE3055T | NPN Transistor isc Silicon NPN Power Transistor
MJE3055T
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) ·High DC Current Gain-
: hFE= 20-100@IC= 4A ·Complement to Type MJE2955T ·Minimum Lot-to-L |
INCHANGE |
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MJE3055T | NPN Silicon Transistor MJE3055T
MJE3055T
General Purpose and Switching Applications
• DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.)
1
TO-220 2.Collector 3.Emitter
1.Base
NPN Si |
Fairchild |
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MJE3055T | COMPLEMENTARY SILICON POWER TRANSISTORS MJE2955T ® MJE3055T
COMPLEMENTARY SILICON POWER TRANSISTORS
s STMicroelectronics PREFERRED SALESTYPES
s COMPLEMENTARY PNP - NPN DEVICES
DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor in |
ST Microelectronics |
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MJE3055T | 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE2955T/D
Complementary Silicon Plastic Power Transistors
MJE2955T * NPN MJE3055T *
*Motorola Preferred Device
PNP
ÎÎÎÎÎÎÎÎÎÎÎÎÎ |
Motorola |
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MJE3055T | HIGH VOLTAGE TRANSISTOR UNISONIC TECHNOLOGIES CO., LTD
MJE3055T
NPN SILICON TRANSISTOR
HIGH VOLTAGE TRANSISTOR
DESCRIPTION
The UTC MJE3055T is designed for general purpose of amplifier and switching applications.
ORDERING |
UTC |
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