डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJE3055AT | Silicon NPN Power Transistor isc Silicon NPN Power Transistor
MJE3055AT
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min) ·High DC Current Gain-
: hFE= 150-260@IC= 1A ·Bandwidth Product-
: fT = 2MHz(Min)@IC = 500 |
Inchange Semiconductor |
|
MJE3055AT | Silicon NPN Power Transistor | Inchange Semiconductor |
|
MJE3055A | Complementary Silicon power transistors | nELL |
www.DataSheet.in | 2017 | संपर्क |