MJE3055 डाटा शीट PDF( Datasheet )

MJE3055 High-reliability discrete products and engineering services since 1977 NPN SILICON POWER TRANSISTOR FEATURES  Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add

isc Silicon NPN Power Transistor MJE3055 DESCRIPTION ·Collector-Emitter Breakdown Voltage- : V(BR)CEO = 60V(Min) ·High DC Current Gain- : hFE= 20-100@IC= 4A ·Complement to Type MJE2955 ·Minimum Lot-to-Lot

MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.) 1 TO-220 2.Collector 3.Emitter 1.Base NPN Si

MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor i

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE2955T/D Complementary Silicon Plastic Power Transistors MJE2955T * NPN MJE3055T * *Motorola Preferred Device PNP ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Plastic-Encapsulate Transistors FEATURES  DC Current Gain Specified to 10A.  High Current Gain. Pb Lead-free Production specification MJE3055 TO-220AB MAXIMUM RATING operating temperature range appli

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