MJE2955 डाटा शीट PDF( Datasheet )

MJE2955T MJE2955T General Purpose and Switching Applications • DC Current Gain Specified to IC = 10 A • High Current Gain Bandwidth Product : fT = 2MHz (Min.) 1 TO-220 2.Collector 3.Emitter 1.Base PNP

Plastic-Encapsulate Transistors FEATURES  DC Current Gain Specified to 10A.  High Current Gain. Pb Lead-free Production specification MJE2955 TO-220AB MAXIMUM RATING operating temperature range appli

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MJE2955T ® MJE3055T COMPLEMENTARY SILICON POWER TRANSISTORS s STMicroelectronics PREFERRED SALESTYPES s COMPLEMENTARY PNP - NPN DEVICES DESCRIPTION The MJE3055T is a silicon Epitaxial-Base NPN transistor i

General Purpose Transistor MJE2955-G (PNP) RoHS Device Features - General Purpose and Switching Application TO-220-3L 0.114(2.89) 0.102(2.59) 0.406(10.31) 0.394(10.01) 0.155(3.935) 0.147(3.735) 0.012(0.30

SEMICONDUCTOR MJE3055A(NPN) MJE2955A(PNP) RRooHHSS Nell High Power Products Complementary Silicon power transistors (10A / 60V / 75W) FEATURES Designed for general-purpose switching and amplifier applicatio

MJE2955T Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-220 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-220 Plastic Package.  特征 / Features 直流电流大，特征频率�