डेटा पत्रक ( Datasheet PDF ) |
भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
MJE2801T | NPN Transistor isc Silicon NPN Power Transistor
MJE2801T
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 60V(Min) ·High DC Current Gain-
: hFE= 25-100@IC= 3A ·Complement to Type MJE2901T ·Minimum Lot-to-L |
INCHANGE |
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MJE2801T | NPN Transistor | INCHANGE |
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