MJE253 डाटा शीट PDF( Datasheet )
डेटा पत्रक ( Datasheet PDF ) |
| भाग संख्या | विवरण | मैन्युफैक्चरर्स | |
| MJE253 | Silicon PNP Power Transistor isc Silicon PNP Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = -100 V(Min) ·DC Current Gain-
: hFE = 40(Min) @ IC= -0.2 A ·Low Collector Saturation Voltage-
: VCE(sat) = |
 Inchange Semiconductor |
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| MJE253 | POWER TRANSISTORS www.DataSheet4U.com
MJE243 − NPN, MJE253 − PNP
Preferred Device
Complementary Silicon Power Plastic Transistors
These devices are designed for low power audio amplifier and low−current, high−speed swi |
 ON |
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| MJE253 | 4 AMPERE POWER TRANSISTORS MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document by MJE243/D
Complementary Silicon Power Plastic Transistors
. . . designed for low power audio amplifier and low–current, high–speed switching ap |
 Motorola |
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| MJE253 | (MJE250 - MJE254 / MJE240 - MJE244) COMPLEMENTARY SILICON POWER TRANSISTORS 145 Adams Avenue, Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824
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 Central Semiconductor |
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| MJE253 | Silicon PNP transistor MJE253
Rev.F Mar.-2016
DATA SHEET
描述 / Descriptions
TO-126 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a TO-126 Plastic Package.
特征 / Features
高 VCEO，直流电流大，特 |
 BLUE ROCKET ELECTRONICS |
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| MJE253G | Complementary Silicon Power Plastic Transistors MJE243G (NPN), MJE253G (PNP)
Complementary Silicon Power Plastic Transistors
These devices are designed for low power audio amplifier and low−current, high−speed switching applications.
Features
• Hig |
 ON Semiconductor |
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