MJE243 डाटा शीट PDF( Datasheet )

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR MJE243 TO-126 Plastic Package ECB Complementary MJE253 Designed for Low Power

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D Complementary Silicon Power Plastic Transistors . . . designed for low power audio amplifier and low–current, high–speed switching ap

www.DataSheet4U.com MJE243 − NPN, MJE253 − PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed swi

MJE243 Rev.F Mar.-2016 DATA SHEET 描述 / Descriptions TO-126 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126 Plastic Package.  特征 / Features 高 VCEO，直流电流大，特�

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isc Silicon NPN Power Transistor MJE243 DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 100 V(Min) ·DC Current Gain- : hFE = 40(Min) @ IC= 0.2 A ·Low Collector Saturation Voltage- : VCE(

MJE243G (NPN), MJE253G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low power audio amplifier and low−current, high−speed switching applications. Features • Hig