No. | Partie # | Fabricant | Description | Fiche Technique |
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ON Semiconductor |
Complementary Silicon Power Plastic Transistors •ăCollector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc •ăHigh DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 5.0 Adc •ăLow Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 V |
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BLUE ROCKET ELECTRONICS |
Silicon PNP transistor -,, MJE200 Low collector-emitter saturation voltage, high current gain bandwidth product, Complement to MJE200. / Applications 。 Designed for general audio amplifier applications. / Equivalent Circuit / Pinning 12 3 PIN1:Emitter PIN 2:Co |
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ST Microelectronics |
SILICON PNP TRANSISTOR |
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Motorola |
5 AMPERE POWER TRANSISTORS ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ |
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ON Semiconductor |
Complementary Silicon Power Plastic Transistors • High DC Current Gain • Low Collector−Emitter Saturation Voltage • High Current−Gain − Bandwidth Product • Annular Construction for Low Leakage • These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collec |
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Central Semiconductor |
COMPLEMENTARY SILICON POWER TRANSISTORS |
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Fairchild |
PNP Epitaxial Silicon Transistor • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) • Complement to MJE200 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless o |
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