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MJE210 DataSheet

No. Partie # Fabricant Description Fiche Technique
1
MJE210

ON Semiconductor
Complementary Silicon Power Plastic Transistors

•ăCollector-Emitter Sustaining Voltage - VCEO(sus) = 25 Vdc (Min) @ IC = 10 mAdc
•ăHigh DC Current Gain - hFE = 70 (Min) @ IC = 500 mAdc = 45 (Min) @ IC = 2.0 Adc = 10 (Min) @ IC = 5.0 Adc
•ăLow Collector-Emitter Saturation Voltage - VCE(sat) = 0.3 V
Datasheet
2
MJE210

BLUE ROCKET ELECTRONICS
Silicon PNP transistor
-,, MJE200  Low collector-emitter saturation voltage, high current gain bandwidth product, Complement to MJE200. / Applications 。 Designed for general audio amplifier applications. / Equivalent Circuit / Pinning 12 3 PIN1:Emitter PIN 2:Co
Datasheet
3
MJE210

ST Microelectronics
SILICON PNP TRANSISTOR
Datasheet
4
MJE210

Motorola
5 AMPERE POWER TRANSISTORS
ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎ
Datasheet
5
MJE210G

ON Semiconductor
Complementary Silicon Power Plastic Transistors

• High DC Current Gain
• Low Collector−Emitter Saturation Voltage
• High Current−Gain − Bandwidth Product
• Annular Construction for Low Leakage
• These Devices are Pb−Free and are RoHS Compliant* MAXIMUM RATINGS Rating Symbol Value Unit Collec
Datasheet
6
MJE210

Central Semiconductor
COMPLEMENTARY SILICON POWER TRANSISTORS
Datasheet
7
MJE210

Fairchild
PNP Epitaxial Silicon Transistor

• Low Collector-Emitter Saturation Voltage
• High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.)
• Complement to MJE200 1 TO-126 2.Collector 3.Base 1. Emitter PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25°C unless o
Datasheet



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