MJE200 डाटा शीट PDF( Datasheet )

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE200/D Complementary Silicon Power Plastic Transistors . . . designed for low voltage, low–power, high–gain audio amplifier applications. �

MJE200 MJE200 Feature • Low Collector-Emitter Saturation Voltage • High Current Gain Bandwidth Product : fT=65MHz @ IC=100mA (Min.) • Complement to MJE210 1 TO-126 2.Collector 3.Base 1. Emitter NPN E

isc Silicon NPN Power Transistor DESCRIPTION ·Collector–Emitter Sustaining Voltage- : VCEO(SUS) = 25V(Min) ·DC Current Gain- : hFE = 70(Min) @ IC= 500mA ·Low Collector-Emitter Saturation Voltage- : VCE(sa

MJE200 NPN MJE210 PNP COMPLEMENTARY SILICON POWER TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MJE200, MJE210 types are complementary silicon transistors designed for

MJE200 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions TO-126F 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a TO-126F Plastic Package.  特征 / Features 集电极-发射极饱和压�

MJE200 - NPN, MJE210 - PNP Preferred Device Complementary Silicon Power Plastic Transistors These devices are Ădesigned for low voltage, low-power, high-gain audio amplifier applications. Features •ăCollec

MJE200G (NPN), MJE210G (PNP) Complementary Silicon Power Plastic Transistors These devices are designed for low voltage, low−power, high−gain audio amplifier applications. Features • High DC Current